PART |
Description |
Maker |
MGFL45V1920 L45V1920 |
From old datasheet system 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET 1.9-2.0 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45V2325A11 |
2.3-2.5 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04 |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FMPA2151 |
2.4 - 2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power 2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module (Preliminary)
|
Fairchild Semiconductor
|
GRM0334C1HR50WD01D LQP03TN1N0B02 AN26025A GRM33B30 |
Ultra small, Single Band LNA-IC for 5 GHz Band Applications
|
Panasonic Battery Group
|
LQP03TN4N7H04 LQP03TN5N1H04 AN26024A GRM33B30J104K |
Ultra small, Single Band LNA-IC for 2.4 GHz Band Applications
|
Panasonic Battery Group
|
FMPA2151 |
2.4-2.5 GHz and 4.9-5.9 GHz Dual Band Linear Power Amplifier Module
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
SST13LP05-MLCF |
2.4-2.5 GHz / 4.9-5.8 GHz Dual-Band Power Amplifier Module
|
SILICON STORAGE TECHNOLOGY INC
|
AN26031A |
Single Band LNA-IC for 2.5 GHz Band Applications
|
Panasonic Battery Group
|
LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications 17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN 17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
HMC398QS16G06 HMC398QS16G 398QS16GE |
8Ku-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz 8nullKu-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
|
Hittite Microwave Corporation
|
MAAMML0020 |
X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz X -> Ka Band, Connectorised Tripler: 9 - 11 GHz -> 27 - 33 GHz
|
MACOM[Tyco Electronics]
|